| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing solid-state imaging element, in which a resist in forming a pattern of a color filter by a dry etching method does not penetrate into a color material, a resist can be removed without damaging a color filter, and a high-density color filter that can cope with higher definition and thinner thickness can be formed, and thereby a highly sensitive solid-state imaging element can be formed.SOLUTION: In a solid-state imaging element including a semiconductor substrate on which a plurality of photodiodes are formed and a color filter formed to correspond to each of the photodiodes, a pattern of a green color filter is formed using a color material formed in a two-layer structure including one layer of a first green color material that does not contain a photosensitive component and the other layer of a second green color material laminated on the one layer.SELECTED DRAWING: Figure 1 |
