| 摘要 |
A silicon wafer distribution state image combination detection method and device. The device comprises an image sensing unit (9) disposed above a silicon wafer group (2) and a photoelectric/ultrasonic scanning unit (4,5/6,7) disposed on a manipulator (1), wherein the photoelectric/ultrasonic scanning unit (4,5/6,7), driven by the manipulator (1), carries out horizontal or vertical positioning. In the method, in an image collection mode in a first detection stage, an abnormal state limit position pre-scanning instruction for the protruding silicon wafer is executed; in a mode in which the photoelectric scanning/ultrasonic scanning unit works firstly and then performs self reception and performs ranging in a second detection stage, a cyclic scanning instruction for all silicon wafers above the pre-scanned protruding wafer is carried out; in a third detection stage, the mode is converted into a mutual reception working mode, and a silicon wafer distribution state anomaly scanning instruction is executed; in a fourth detection stage, the mode is again converted into a self reception working mode, and a cyclic scanning instruction for all silicon wafers below the pre-scanned protruding wafer is executed; and multiple scanning and detection points are distributed around a loader (3), thereby further improving the detection precision. |
