MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal in which contamination of a heterogeneous polytype is suppressed.SOLUTION: A manufacturing method of a silicon carbide single crystal includes: a step (S01) of filling silicon carbide raw material with a fluidity index of 70 or more and 100 or less into a crucible such that an in-plane composition of sublimation gas generated without causing a partial deviation in a raw material powder when the raw material powder is filled into the crucible by flowing the raw material powder; and a step (S02) of sublimating the silicon carbide raw material by heating the silicon carbide raw material. The method is capable of depositing and growing the silicon carbide single crystal on a seed crystal, in which contamination of a heterogeneous polytype is suppressed.SELECTED DRAWING: Figure 1