| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can sufficiently inhibit leakage current.SOLUTION: A semiconductor device comprises: a substrate; a nitride-based compound semiconductor layer serving as a current path of a principal current formed on the substrate; first and second main electrodes which are arranged on the nitride-based compound semiconductor layer and pass a current to the principal current path; a base part of an outer peripheral electrode which is arranged on the nitride-based compound semiconductor layer so as to surround the first and second main electrodes; and an extension part of the outer peripheral electrode which is provided on the nitride-based compound semiconductor layer via an insulation layer and extends outward from the outer peripheral electrode in plan view. |
