Method of forming a dielectric film

摘要

A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for planarization quality at the upper regions of the deposited film.

主权项

1. A method of forming a dielectric film comprising:
depositing a flowable oxide on a semiconductor structure in a first phase having a first oxygen flow rate for a first time interval, wherein the first oxygen flow rate is zero; depositing a flowable oxide on a semiconductor structure in a second phase having a second oxygen flow rate for a second time interval; depositing a flowable oxide on a semiconductor structure in a third phase having a third oxygen flow rate for a third time interval, wherein the second oxygen flow rate is greater than the first oxygen flow rate, and wherein the third oxygen flow rate is greater than the second oxygen flow rate.