发明名称 SEMICONDUCTOR PACKAGE ASSEMBLY WITH A METAL-INSULATOR-METAL CAPACITOR STRUCTURE
摘要 The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package including a first semiconductor die (302). A first redistribution layer (RDL) structure (308) is coupled to the first semiconductor die. The first redistribution layer (RDL) structure includes a first conductive trace (452b) disposed at a first layer-level. A second conductive trace (454b) is disposed at a second layer-level. A first inter-metal dielectric (IMD) layerc (318) and a second intermetal dielectric (IMD) layer (456b), which is beside the first inter-metal dielectric (IMD) layer, are disposed between the first conductive trace and the second conductive trace, resulting in a metal-insulator-metal (MIM) capacitor structure.
申请公布号 EP3073525(A3) 申请公布日期 2016.12.21
申请号 EP20160159135 申请日期 2016.03.08
申请人 MediaTek, Inc 发明人 Lin, Tzu-Hung;PENG, I-Hsuan;HSIAO, Ching-Wen
分类号 H01L23/522;H01L23/498;H01L23/538;H01L25/065;H01L25/10;H01L25/16 主分类号 H01L23/522
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