| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation apparatus for an inorganic oxide film, which can prevent variations in the property of the inorganic oxide film at a boundary between the inorganic oxide film and a film other than the inorganic oxide film, and to provide a method of forming an IGZO (Indium Gallium Zinc Oxide) film.SOLUTION: One inorganic oxide film is configured as a laminate of an interface layer and a buffer layer. A formation apparatus includes: a first cathode device 20 which forms the interface layer in a region where the inorganic oxide film is formed; and a second cathode device which forms the buffer layer in the formation region. A region facing the formation region is set as an opposite region. The first cathode device 20 includes a target scanning part which scans an erosion region 21a in the opposite region, and the second cathode device forms a plurality of erosion regions arranged in the opposite region. |
