发明名称 ゲート駆動回路、インバータ回路、電力変換装置および電気機器
摘要 PROBLEM TO BE SOLVED: To provide a gate drive circuit that implements stable drive by suppressing the generation of a spike voltage when turning on a semiconductor switching element.SOLUTION: The gate drive circuit for applying an on voltage and an off voltage to a gate terminal of a semiconductor switching element 20 includes: negative bias application means (capacitors C, C) for applying a negative bias for turning off the semiconductor switching element to the gate terminal; and short-circuiting switching means (switch circuit having power MOSFETs Q, Q) for switching a connection to establish a short circuit between the gate terminal and a source terminal when turning on the semiconductor switching element.
申请公布号 JP6048929(B2) 申请公布日期 2016.12.21
申请号 JP20120241653 申请日期 2012.11.01
申请人 ローム株式会社;国立大学法人島根大学 发明人 山口 敦司;山本 真義;梅上 大勝;服部 文哉
分类号 H03K17/16;H02M1/08 主分类号 H03K17/16
代理机构 代理人
主权项
地址
您可能感兴趣的专利