摘要 |
Provided are a manufacturing method of substrate grown graphene, substrate grown graphene, and an electronic part comprising the same. The manufacturing method of substrate grown graphene comprises the following steps of: (1) arranging a catalyst-free layer on a substrate; (2) providing an etching gas and a carbon-containing gas, and conducting inductively coupled plasma chemical vapor deposition (ICP-CVD); (3) supplying an etching gas for the catalyst-free layer when supplying the carbon-containing gas, and growing graphene on the catalyst-free layer; and (4) continuously conducting ICP-CVD from the process of the step (3), and growing graphene on the substrate without the catalyst-free layer by continuously removing all of the catalyst-free layer by the etching gas. |