Optoelectronic semiconductor chip and method for the production thereof

摘要

An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).

主权项

1. An optoelectronic semiconductor chip comprising:
a substrate; a cladding lever arranged directly on the substrate, the cladding layer has a planar top face facing away from the substrate; a growth layer which contains at least one first nitride compound semiconductor material and which is directly applied on the cladding layer; an active zone, which contains at least one second nitride compound semiconductor material and is arranged directly on the growth layer; a top layer, which is arranged on the active zone and which is made of a transparent conductive oxide and which has a planar top side facing away from the active zone; and at least one further semiconductor layer which is arranged between the top layer and the active zone, wherein the growth layer has a first side facing the active zone and has a second side opposite of the first side, the first and the second side completely extend over the growth layer in a lateral direction, a plurality of structural elements is arranged on the first side of the growth layer, the structural elements having the form of protrusions or indentations in the first side of the growth layer and cover only a part of the first side and the structural elements are distributed at irregular intervals over the first side, and the second side of the growth layer is planar and runs in parallel with parts of the first side which are not covered with the structural elements.