发明名称 |
MOUNTING DEVICE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
A mounting apparatus is provided to improve the endurance of plasma and eliminate the possibility of metal contamination by forming an electrostatic chuck layer made of a Y2O3 spray layer. A processed object is mounted on a mounting body(21). An electrostatic chuck generates column force between an electrode layer(42) and a processed object by applying a voltage to an electrode buried in an insulation layer and electrostatically absorb the processed object to the surface of the insulation layer, formed on the mounting body. The electrostatic layer as an insulation layer formed on the surface of the electrode layer is made of a Y2O3 spray layer(43) having a thickness of 200-280 mum formed by a plasma spray method. The average surface roughness of the electrostatic layer can be 0.6-0.8 mum. The voltage applied to the electrode layer can be not lower than 2.5 kV.
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申请公布号 |
KR20080041116(A) |
申请公布日期 |
2008.05.09 |
申请号 |
KR20070111908 |
申请日期 |
2007.11.05 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ITO HIROHARU;KATO KENICHI;UEDA TAKEHIRO |
分类号 |
H01L21/3065;H01L21/205;H01L21/687 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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