| 摘要 |
A multilayered SiC wafer is provided to reduce fabricating cost as compared with SiC having an SiGeC structure formed by an ion implantation method by forming an SiGeC epitaxial layer on an SiC wafer by a CVD(Chemical Vapor Deposition) method. A buffer layer is formed on a bare SiC wafer. An SiGeC layer is formed on the buffer layer. The buffer layer can be composed of a Si(1-x)C(x) layer whose composition varies wherein x is a value of 0.1-0.5. The SiGeC layer can be formed at a temperature of 700-1000 °C.
|
