| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate manufacturing method which can reduce cracks when slicing a nitride semiconductor single crystal to improve yield of a nitride semiconductor substrate.SOLUTION: A nitride semiconductor substrate manufacturing method comprises: a growth process of growing on a seed crystal substrate, a nitride semiconductor single crystal with a diameter of 36 mm or more by vapor phase epitaxy; a grinding process of grinding an outer peripheral surface of the grown nitride semiconductor single crystal; and a slice process of slicing the nitride semiconductor single crystal with the outer peripheral surface being ground. A grinding amount of the outer peripheral surface of the nitride semiconductor single crystal in the grinding process is 1.5 mm or more and surface roughness RMS of the ground outer peripheral surface is 3 μm or less. |
