发明名称 |
METHOD FOR MAKING ENHANCED SEMICONDUCTOR STRUCTURES IN SINGLE WAFER PROCESSING CHAMBER WITH DESIRED UNIFORMITY CONTROL |
摘要 |
A method for processing a semiconductor wafer in a single wafer processing chamber may include heating the single wafer processing chamber to a temperature in a range of 650-700°C, and forming at least one superlattice on the semiconductor wafer within the heated single wafer processing chamber by depositing silicon and oxygen to form a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base silicon monolayers defining a base silicon portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions. Depositing the oxygen may include depositing the oxygen using an N2O gas flow. |
申请公布号 |
WO2016196600(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
WO2016US35223 |
申请日期 |
2016.06.01 |
申请人 |
ATOMERA INCORPORATED |
发明人 |
MEARS, Robert, J.;CODY, Nyles;STEPHENSON, Robert, John |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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