| 发明名称 | Silicon-germanium semiconductor devices and method of making | ||
| 摘要 | Oxidation treatment of a Si1-xGex (0<x<1) substrate forms on the substrate an interfacial layer comprised of silicon oxide and germanium oxide. The presence of germanium oxide in the interfacial layer is deleterious to the quality of the interfacial layer/Si1-xGex conducting channel as evidenced by an increase in charge interface states and a decrease in carrier mobility. Germanium oxide is scavenged from the interfacial layer in a scavenging step comprising heating the interfacial layer/substrate in a hydrogen-containing reducing atmosphere at a temperature of from about 450° C. to about 800° C. to reduce the germanium oxide content of the interfacial layer to not more than about 10% by weight, for example, not more than about 1% by weight, of the weight of the scavenged interfacial layer. | ||
| 申请公布号 | US9595449(B1) | 申请公布日期 | 2017.03.14 |
| 申请号 | US201514976522 | 申请日期 | 2015.12.21 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Jagannathan Hemanth;Lee ChoongHyun |
| 分类号 | H01L21/02;H01L21/3105;H01L29/78;H01L29/161;H01L21/324;H01L21/30;H01L29/51 | 主分类号 | H01L21/02 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method of refining a mixed silicon oxide-germanium oxide interfacial layer of a silicon-germanium transistor substrate, the method comprising: contacting (i) hydrogen and (ii) the silicon-germanium transistor substrate at a temperature, pressure, and length of time sufficient to scavenge germanium oxide from the mixed silicon oxide-germanium oxide interfacial layer of the silicon-germanium transistor substrate, leaving silicon oxide remaining; wherein the contacting is carried out at a temperature from about 450° C. to about 800° C. in a reducing atmosphere having a hydrogen partial pressure of from about 0.1 Torr to about 15,200 Torr. | ||
| 地址 | Armonk NY US | ||