发明名称 |
Critical dimension shrink through selective metal growth on metal hardmask sidewalls |
摘要 |
A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via. |
申请公布号 |
US9595473(B2) |
申请公布日期 |
2017.03.14 |
申请号 |
US201514727132 |
申请日期 |
2015.06.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Chen Hsueh-Chung H.;He Hong;Li Juntao;Yang Chih-Chao;Yin Yunpeng |
分类号 |
H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP ;Alexanian Vazken |
主权项 |
1. A method for fabricating a self-aligned via structure, the method comprising:
forming a tri-layer mask on an inter-level dielectric (ILD) layer, the ILD layer disposed over a lower metal wiring layer, and the tri-layer mask comprising a first insulating layer, a second insulating layer, and a metal layer disposed between the first and second insulating layers; defining a trench pattern through the first insulating layer and the metal layer of the tri-layer mask, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern in the tri-layer mask, the first via pattern having a second width, and the second width being larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width of the trench pattern to a third width, the third width defining a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via. |
地址 |
Armonk NY US |