发明名称 Antenna, dielectric window, plasma processing apparatus and plasma processing method
摘要 An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.
申请公布号 US9595425(B2) 申请公布日期 2017.03.14
申请号 US201213541940 申请日期 2012.07.05
申请人 TOKYO ELECTRON LIMITED 发明人 Matsumoto Naoki;Yoshikawa Wataru;Yoshikawa Jun;Moyama Kazuki;Ishibashi Kiyotaka;Morita Osamu;Tanikawa Takehiro
分类号 C23C16/00;C23F1/00;H01L21/306;H01J37/32 主分类号 C23C16/00
代理机构 Brundidge & Stanger, P.C. 代理人 Brundidge & Stanger, P.C.
主权项 1. A plasma processing apparatus comprising: an antenna including a dielectric window and a slot plate which has a plurality of slots; a central inlet unit having a central inlet opening positioned at a central portion of the dielectric window and above a central portion of a processing target substrate, the central inlet unit being configured to introduce a first processing gas into a plasma exciting region directly under the dielectric window; a peripheral inlet unit arranged along a circumferential direction of a plasma diffusing region under the plasma exciting region and directly above the processing target substrate, the peripheral inlet unit being configured to introduce a second processing gas into the plasma diffusing region; a processing chamber for accommodating the antenna therein; a table, provided within the processing chamber so as to face a bottom surface of the dielectric window, for mounting the processing target substrate thereon; a microwave inlet path that connects a microwave generator with the slot plate, wherein the slot plate is provided on a top surface of the dielectric window, the dielectric window and the slot plate have circular plate shapes, and centers of the dielectric window and the slot plate have a same axis, wherein the dielectric window comprises: a ring shaped first recess formed on the bottom surface of the dielectric window and having a tapered shape inwardly in a plate thickness direction of the dielectric window, anda plurality of second recesses formed on a flat surface surrounded by the ring shaped first recess and having circular shapes at a regular interval in a circumferential direction thereof, and wherein a diameter of each second recess and a distance from a bottom surface of each second recess to the top surface of the dielectric window are set to be about ¼ of a wavelength of a microwave introduced to the dielectric window, when viewed from a thickness direction of the slot plate, a center of each second recess is matched with a center of a corresponding slot of the slot plate, and wherein the first processing gas includes a plasma excitation gas, and the second processing gas includes the plasma excitation gas and an etching gas, wherein the central inlet unit includes a first through hole formed in the dielectric window and an injector having a plurality of second through holes, and the injector is formed as a single body with the dielectric window, and wherein the plurality of second through holes of the injector communicate with the first through hole formed in the dielectric window, an electric field shield member enclosing the injector and disposed completely inside the dielectric window, wherein the electric field shield member is extended downwardly to a position that is closer to a processing space than a bottom surface of the injector; and a pipeline member being positioned above the injector and connected to an upper portion of the electric field shield member.
地址 Tokyo JP
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