| 摘要 |
This semiconductor device is provided with a semiconductor substrate (10) that has: a first conductivity-type drift layer (11); a second conductivity-type base layer (12) formed on a surface layer portion of the drift layer; and second conductivity-type collector layers (21) and first conductivity-type cathode layers (22), which are formed on the drift layer side that is the reverse side of the base layer. Semiconductor substrate regions operating as IGBT elements are defined as IGBT regions (1a), and semiconductor substrate regions operating as diode elements are defined as diode regions (1b), and the IGBT regions and the diode regions are alternately formed repeatedly. The IGBT regions and the diode regions are demarcated from each other by boundaries between the collector layers and the cathode layers. By having the collector layers as first collector layers, the semiconductor device is provided with second collector layers on the semiconductor substrate surface on the side on which the first collector layers and the cathode layers are formed, said second collector layers having a higher second conductivity-type impurity concentration than the first collector layers. |
