| 摘要 |
<p>A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well. The photon source further comprises electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot. The electric field is tuneable across an operating range wherein the tunnelling time of carriers from said quantum dot to said first electrical contact and the tunnelling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, the photon source being configured such that emission from a single quantum dot exits said photon source.</p> |
