| 发明名称 |
APPARATUS AND METHOD FOR PLACING STRESSORS WITHIN AN INTEGRATED CIRCUIT DEVICE TO MANAGE ELECTROMIGRATION FAILURES |
| 摘要 |
An integrated circuit device includes a first line in a first metal layer of the integrated circuit device, wherein the first line forms at least a portion of an interconnect, a second line in a second metal layer of the integrated circuit device, and a first via that couples the first line to the second line. The integrated circuit device further includes a first stressor disposed at a first area of the interconnect, wherein the first area at least partially overlaps the first via, wherein the first stressor alters an electromigration stress profile for the interconnect by altering a stress at the first area to be less tensile. |
| 申请公布号 |
US2017069572(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615256207 |
申请日期 |
2016.09.02 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
Reber Douglas M.;Shroff Mehul D.;Travis Edward O. |
| 分类号 |
H01L23/528;H01L21/768;H01L23/522 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit device comprising:
a first line in a first metal layer of the integrated circuit device, wherein the first line forms at least a portion of an interconnect; a second line in a second metal layer of the integrated circuit device; a first via that couples the first line to the second line; and a first stressor disposed at a first area of the interconnect, wherein the first area at least partially overlaps the first via, wherein the first stressor alters an electromigration stress profile for the interconnect by altering a stress at the first area to be less tensile. |
| 地址 |
Austin TX US |
