| 摘要 |
The present invention provides, in one embodiment, a gate structure ( 100 ). The gate structure comprises a gate dielectric ( 105 ) and a gate ( 110 ). The gate dielectric includes a refractory metal and is located over a semiconductor substrate ( 115 ). The semiconductor substrate has a conduction band and a valence band. The gate is located over the gate dielectric and includes the refractory metal. The gate has a work function aligned toward the conduction band or the valence band. Other embodiments include an alternative gate structure ( 200 ), a method of forming a gate structure ( 300 ) for a semiconductor device ( 301 ) and a dual gate integrated circuit ( 400 ).
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