HYDROFLUOROCARBON GAS-ASSISTED PLASMA ETCH FOR INTERCONNECT FABRICATION

摘要

In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

主权项

1. A method, the method comprising:
providing a layer of a dielectric material; and etching a trench in the layer of the dielectric material, by applying a mixture of a dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material, wherein a ratio of the dielectric etch as to the polymerizing etch gas in the mixture is sufficient to line sidewalls of the trench with a passivation layer as the trench is etched.