| 发明名称 |
PLASMA PROTECTION DIODE FOR A HEMT DEVICE |
| 摘要 |
A silicon substrate having a III-V compound layer disposed thereon is provided. A diode is formed in the silicon substrate through an ion implantation process. The diode is formed proximate to an interface between the silicon substrate and the III-V compound layer. An opening is etched through the III-V compound layer to expose the diode. The opening is filled with a conductive material. Thereby, a via is formed that is coupled to the diode. A High Electron Mobility Transistor (HEMT) device is formed at least partially in the III-V compound layer. |
| 申请公布号 |
US2017069617(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615357308 |
申请日期 |
2016.11.21 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Wong King-Yuen;Hsu Chun-Wei;Yu Chen-Ju;Yao Fu-Wei;Yu Jiun-Lei Jerry;Yang Fu-Chih;Chen Po-Chih |
| 分类号 |
H01L27/02;H01L29/778;H01L29/20;H01L29/205;H01L27/06;H01L21/8258;H01L21/265;H01L29/66;H01L21/306;H01L21/768;H01L23/522;H01L29/861 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a transistor device disposed at least partially over a III-V compound layer; a conductive via disposed below the transistor; and a diode electrically coupled to the transistor through the conductive via, wherein the diode includes:
a first doped portion that is disposed below and electrically coupled to the via; anda second doped portion that surrounds the first doped portion except an upper surface of the first doped portion, wherein the first doped portion and the second doped portion have different types of conductivity. |
| 地址 |
Hsin-Chu TW |
