| 摘要 |
To reduce the number of photolithography processes in manufacturing an active matrix substrate. Provided is a TFT substrate which has a pixel electrode connected to a drain electrode of a TFT, a source line connected to a source electrode of the TFT, and a gate line connected to a gate electrode of the TFT. A source electrode, a drain electrode, and a source line include a conductive film of the same layer as the pixel electrode. Under the source line and the pixel electrode, there remains a semiconductor layer of the same layer as a semiconductor film which constitutes a channel part of the TFT substrate. |
| 主权项 |
1. A manufacturing method of an active matrix substrate equipped with
a thin film transistor, a pixel electrode connected to a drain electrode of said thin film transistor, and a source line connected to a source electrode of said thin film transistor, the manufacturing method comprising the steps of: (a) forming on a substrate a first laminated film in which a semiconductor film comprising a transparent oxide semiconductor, a first transparent conductive film, and a first metal film are laminated in this order; (b) forming on said first laminated film a first photoresist pattern having a first part covering a formation area of a channel part of said thin film transistor, a second part which is thicker than said first part and covers a formation area of said pixel electrode, and a third part which is thicker than said second part and covers formation areas of said source electrode, said drain electrode, and said source line; (c) patterning said first metal film, said first transparent conductive film, and said semiconductor film by using said first photoresist pattern as a mask; (d) reducing, after said step (c), a thickness of said first photoresist pattern to remove said first part, and then patterning said first metal film and said first transparent conductive film by using a remainder of said first photoresist pattern as a mask; and (e) further reducing, after said step (d), a thickness of said first photoresist pattern to remove said second part, and then patterning said first metal film by using a remainder of said first photoresist pattern as a mask. |
