| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a method of manufacturing a semiconductor device includes forming a mask on a film provided on a substrate, selectively etching the film by applying an ion beam of an inert gas to the film after the forming of the mask, and applying an electron beam to the film after the etching. |
| 申请公布号 |
US2017069836(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615067098 |
申请日期 |
2016.03.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TOMIOKA Kazuhiro |
| 分类号 |
H01L43/12;H01J37/20;H01J37/305;H01L43/08;H01L43/02 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a mask or a film provided on a substrate; selectively etching the film by applying an ion beam of an inert gas to the film after the forming of the mask; and applying an electron beam to the film after the etching. |
| 地址 |
Tokyo JP |
