| 发明名称 |
OXIDE SINTERED BODY AND METHOD FOR MANUFACTURING THE SAME, SPUTTERING TARGET, AND SEMICONDUCTOR DEVICE |
| 摘要 |
There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm3 and equal to or lower than 7.5 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device. |
| 申请公布号 |
US2017069474(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201515122448 |
申请日期 |
2015.10.15 |
| 申请人 |
Sumitomo Electric Industries, Ltd. |
发明人 |
Miyanaga Miki;Awata Hideaki;Watatani Kenichi |
| 分类号 |
H01J37/34;H01L29/22;C23C14/34;C04B35/01;C04B35/626 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxide sintered body comprising indium, tungsten and zinc, wherein
the oxide sintered body includes a bixbite type crystal phase as a main component, the oxide sintered body has an apparent density of higher than 6.6 g/cm3 and equal to or lower than 7.5 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. |
| 地址 |
Osaka-shi JP |
