发明名称 |
ORGANIC THIN-FILM TRANSISTOR, ORGANIC THIN-FILM TRANSISTOR MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR FILM MANUFACTURING METHOD |
摘要 |
The present invention addresses the problem of providing the following: an organic thin-film transistor that demonstrates high carrier mobility and low threshold voltage, and that excels in heat resistance; an organic thin-film transistor manufacturing method; an organic semiconductor composition; an organic semiconductor film; and an organic semiconductor film manufacturing method. This organic thin-film transistor includes, on a substrate, the following: a gate electrode; an organic semiconductor layer that contains an organic semiconductor compound; a gate insulation layer disposed between the gate electrode and the organic semiconductor layer; and a source electrode and drain electrode which are disposed in contact with the organic semiconductor layer and which are connected via the organic semiconductor layer. The organic semiconductor layer touches a resin (C) layer formed of the resin (C), or further contains the resin (C). The organic semiconductor compound has a molecular weight of at least 2000, and includes a repeating unit represented by formula (1). |
申请公布号 |
WO2017038948(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
WO2016JP75714 |
申请日期 |
2016.09.01 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
YAMAMOTO Yosuke;TAKIZAWA Hiroo;SHIGENOI Yuta;TAMAKUNI Fumiko;GOTO Takashi;WATANABE Tetsuya |
分类号 |
H01L29/786;H01L21/336;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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