METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

摘要

A method of forming a pattern of a semiconductor device includes forming a lower film on a substrate having a first surface and a second surface at different levels, forming an upper film of hydrophobic material on the lower film, forming a block copolymer film on the upper film, phase-separating the block copolymer film to form first patterns spaced apart from one another and a second pattern spanning the first patterns and interposed between a bottom surface of each of the first patterns and the upper film, removing the first patterns, and performing an etch process using the second pattern or a residual part of the second pattern as an etch mask.

主权项

1. A method of forming a pattern of a semiconductor device, the method comprising:
forming a lower film on a substrate, the lower film comprising a first surface and a second surface with a level difference therebetween; forming an upper film containing a hydrophobic material on the lower film; coating a block copolymer film on the upper film; phase-separating the block copolymer film to form first patterns spaced apart from one another and a second pattern making up between the first patterns on the first surface and the second surface; removing the first patterns or the second pattern; and performing an etch process using the first patterns and a residual part of the second pattern as an etch mask, wherein the second patterns is disposed between a bottom surface of each of the first patterns and the upper film.