| 发明名称 |
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND SUBSTRATE HOLDING MEMBER |
| 摘要 |
A substrate processing apparatus includes a process chamber, and a turntable provided in the process chamber and including a substrate holding region formed in a top surface along a circumferential direction of the turntable. A surface area increasing region is provided in the top surface of the turntable around the substrate holding region and is configured to increase a surface area of the top surface of the turntable to an area larger than a surface area of a flat surface by including a concavo-convex pattern in its top surface. A process gas supply unit is configured to supply a process gas to the top surface of the turntable. |
| 申请公布号 |
US2017125258(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615333282 |
申请日期 |
2016.10.25 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
SATO Jun;MIURA Shigehiro |
| 分类号 |
H01L21/3065;H01J37/32;C23C16/455;H01L21/687;H01L21/67 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus comprising:
a process chamber; a turntable provided in the process chamber and including a substrate holding region formed in a top surface along a circumferential direction of the turntable; a surface area increasing region provided in the top surface of the turntable around the substrate holding region and configured to increase a surface area of the top surface of the turntable to an area larger than a surface area of a flat surface by including a concavo-convex pattern in its top surface; and a process gas supply unit configured to supply a process gas to the top surface of the turntable. |
| 地址 |
Tokyo JP |
