| 发明名称 |
Semiconductor Device |
| 摘要 |
In an embodiment, a semiconductor device includes an enhancement mode Group III-nitride-based High Electron Mobility Transistor (HEMT) including a drain, a gate, a barrier layer, a channel layer, a barrier layer arranged on the channel layer, and a heterojunction formed between the barrier layer and the channel layer and capable of supporting a two-dimensional electron gas (2DEG). At least one of a thickness and a composition of the barrier layer is configured to decrease a 2DEG density in a channel region compared with a 2DEG density outside of the channel region, wherein the channel region is arranged under the gate and extends a distance d beyond a drain-sided gate edge. |
| 申请公布号 |
US2017125572(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615336036 |
申请日期 |
2016.10.27 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Curatola Gilberto;Haeberlen Oliver |
| 分类号 |
H01L29/778;H01L29/205;H01L29/423;H01L29/08;H01L29/10;H01L29/20;H01L29/40 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an enhancement mode Group III-nitride-based High Electron Mobility Transistor (HEMT) comprising:
a drain;a gate;a channel layer;a barrier layer arranged on the channel layer; anda heterojunction formed between the barrier layer and the channel layer,wherein at least one of a thickness and a composition of the barrier layer is configured to decrease a 2DEG (two-dimensional electron gas) density in a channel region compared with a 2DEG density outside of the channel region,wherein the channel region is arranged under the gate and extends a distance d beyond a drain-sided edge of the gate. |
| 地址 |
Villach AT |
