Semiconductor package with package-on-package stacking capability and method of manufacturing the same

摘要

The present invention relates to a method of making a semiconductor package with package-on-package stacking capability. In accordance with a preferred embodiment, the method is characterized by forming through openings that extend through a metallic carrier between first and second surfaces of the metallic carrier, attaching a chip-on-interposer subassembly on the metallic carrier using an adhesive, with the chip inserted into a cavity of the metallic carrier, and with the chip-on-interposer subassembly attached to the metallic carrier, forming first and second buildup circuitry on a first surface of the interposer and the second surface of the metallic carrier, respectively, and subsequently forming plated through holes that extend into the through openings to provide electrical and thermal connections between the first and second buildup circuitry. The method and resulting device advantageously provides vertical signal routing and stacking capability for a semiconductor package.

主权项

1. A method of making a semiconductor package with package-on-package stacking capability, comprising the steps of:
providing a chip; providing an interposer that includes a first surface, a second surface opposite to the first surface, first contact pads on the first surface, second contact pads on the second surface, and through vias that electrically couple the first contact pads and the second contact pads; electrically coupling the chip to the second contact pads of the interposer by a plurality of bumps to form a chip-on-interposer subassembly; providing a metallic carrier having a first surface, an opposite second surface, and a cavity formed in the first surface; forming through openings that extend through the metallic carrier between the first surface and the second surface thereof; attaching the chip-on-interposer subassembly to the metallic carrier using an adhesive with the chip inserted into the cavity and the interposer laterally extending beyond the cavity; with the chip-on-interposer subassembly attached to the metallic carrier, forming a first buildup circuitry on the first surface of the interposer, wherein the first buildup circuitry is electrically coupled to the first contact pads of the interposer through first conductive vias of the first buildup circuitry; forming a second buildup circuitry on the second surface of the metallic carrier; and forming plated through holes that extend through the through openings to provide electrical and thermal connections between the first buildup circuitry and the second buildup circuitry.