High performance power module

摘要

The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.

主权项

1. A power module comprising:
a housing with an interior chamber; and a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor configured to receive a separate control signal that is varied to provide a sinusoidal drive current and at least one diode wherein a source of the at least one transistor and an anode of the at least one diode are directly coupled together and directly coupled to a pin and the power module is able to block 1200 volts, conduct at least 50 amperes, and has switching losses of less than ten milli-Joules.