Method for removing an ion-implanted organic resin layer during fabrication of semiconductor devices.

摘要

In the present invention, a method for removing an organic resin material layer reduces residual substances upon removing an ion-implanted organic resin material layer. Inorganic contaminants adhered to the surface of organic resin material layer during ion-implantation are removed by etching, and thereafter, the layer is decomposed and removed by plasma irradiation of the organic resin material layer. An alkaline etchant is used for etching off inorganic contaminants.