发明名称 |
Seal ring structure with capacitor |
摘要 |
A semiconductor device includes a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region. And, a plurality of doping regions are located beneath the first seal ring structure. |
申请公布号 |
US9640489(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201414320725 |
申请日期 |
2014.07.01 |
申请人 |
MEDIATEK INC. |
发明人 |
Hung Cheng-Chou;Lee Tung-Hsing;Huang Yu-Hua;Yang Ming-Tzong |
分类号 |
H01L21/02;H01L23/00;H01L23/58;H01L29/94;H01L27/08 |
主分类号 |
H01L21/02 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region; an insulating layer on the semiconductor substrate; a first seal ring structure embedded in the insulating layer corresponding to the seal ring region; and a shallow trench isolation (STI) structure located directly beneath the first seal ring structure such that the first seal ring structure overlies the STI structure, wherein at least one opening cutting the STI structure into different portions. |
地址 |
Hsin-Chu TW |