Method of fabricating semiconductor device

摘要

A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 μm or less, and the metal layer being exposed in the first portion.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a metal layer containing Al; forming a first insulating film on the metal layer; forming an opening pattern to the first insulating film, the metal layer being exposed in the opening pattern; forming a wiring layer on a surface of the metal layer that is exposed in the opening pattern, a region, in which the surface of the metal layer is exposed between an edge of the wiring layer and an edge of the opening pattern, being formed; and forming a protective layer on the surface of the metal layer in the region so that the protective layer covers an upper surface and a side surface of the wiring layer, wherein the protective layer is made of metal.