Semiconductor device and manufacturing method of semiconductor device

摘要

A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer and a third semiconductor layer formed on the first semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; a gate electrode formed on the fourth semiconductor layer; and a source electrode and a drain electrode formed in contact with the second semiconductor layer. The third semiconductor layer and the fourth semiconductor layer are formed in an area immediately below the gate electrode, the fourth semiconductor layer is formed with a p-type semiconductor material, and the second semiconductor layer and the third semiconductor layer are formed with AlGaN, and the third semiconductor layer has a lower composition ratio of Al than that of the second semiconductor layer.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
sequentially forming a first semiconductor layer and a second semiconductor layer on a substrate; forming an opening part by removing parts of the second semiconductor layer and the first semiconductor layer immediately below an area where a gate electrode is to be formed; sequentially forming a fifth semiconductor layer, a third semiconductor layer, and a fourth semiconductor layer on the first semiconductor layer exposed at the opening part; forming the gate electrode on the fourth semiconductor layer; and forming a source electrode and a drain electrode in contact with the second semiconductor layer, wherein the fourth semiconductor layer is formed with a p-type semiconductor material, the first semiconductor layer and the fifth semiconductor layer are formed with the same material, and the second semiconductor layer and the third semiconductor layer are formed with AlGaN, and the third semiconductor layer has a lower composition ratio of Al than that of the second semiconductor layer.