| 发明名称 |
FABRICATION METHOD OF SEMICONDUCTOR MULTILAYER STRUCTURE |
| 摘要 |
The present invention is directed to a fabrication method of a semiconductor multilayer structure. By utilizing the indium-containing catalyst and/or gallium-containing catalyst, the aluminum migration can be enhanced to increase quality and flatness of the aluminum contained nitride buffer layer. Furthermore, the costs and energy consumption can be reduced too. |
| 申请公布号 |
US2017117136(A1) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201715397267 |
申请日期 |
2017.01.03 |
| 申请人 |
Hermes-Epitek Corp. |
发明人 |
KOBAYASHI Takashi;LIN Po-Jung;WU Chih-Sheng;CHUNG Bu-Chin |
| 分类号 |
H01L21/02;H01L29/20;H01L29/205;H01L29/15 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fabrication method of a semiconductor multilayer structure comprising:
providing a silicon substrate in a reaction chamber; and depositing a plurality of semiconductor layers on the silicon substrate, wherein at least one of the semiconductor layers is an aluminum contained nitride layer, and an indium-containing catalyst is introduced into the chamber to enhance migration of aluminum in the aluminum contained nitride layer during depositing the aluminum contained nitride layer. |
| 地址 |
Taipei City TW |
