| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A method of fabricating a semiconductor device is provided as follows. A strain relaxed buffer (SRB) layer is formed on a substrate. The SRB layer is formed of a first silicon germanium alloy (SiGe) layer which has a first atomic percent of germanium (Ge) atoms. A heterogeneous channel layer is formed on the SRB layer. The heterogeneous channel layer includes a silicon layer on a first region of the SRB layer and a second SiGe layer on a second region of the SRB layer. The second SiGe layer includes a second atomic percent of germanium greater than the first atomic percent of germanium atoms. The silicon layer is in contact with the second SiGe layer. |
| 申请公布号 |
US2017117362(A1) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201615145040 |
申请日期 |
2016.05.03 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG-KWON;CHA JI-HOON |
| 分类号 |
H01L29/10;H01L27/092;H01L27/11;H01L29/165;H01L29/16;H01L21/8238;H01L29/161 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, comprising:
forming a strain relaxed buffer (SRB) layer on a substrate, the SRB layer being formed of a first silicon germanium alloy which has a first atomic percent of germanium (Ge) atoms; and forming a heterogeneous channel layer on the SRB layer, the heterogeneous channel layer including a silicon layer on a first region of the SRB layer and a second SiGe layer on a second of the SRB layer, wherein the second SiGe layer is formed of a second silicon germanium alloy, wherein the second SiGe layer includes a second atomic percent of germanium atoms greater than the first atomic percent of germanium atoms, and wherein the silicon layer is in contact with the second SiGe layer. |
| 地址 |
SUWON-SI KR |
