Substrate structure and method for manufacturing same

摘要

Provided is a substrate structure, including: a first substrate and a second substrate arranged correspondingly. A first surface of the first substrate faces a second surface of the second substrate, wherein the first surface is successively arranged with a conductor interconnection layer and a bonding layer, with the bonding layer connecting the first substrate and the conductor interconnection layer to the second substrate. The substrate structure and a method for manufacturing the same. The second substrate can serve as a support substrate and the first substrate as a substrate for directly manufacturing a device. However, the first substrate is formed by the growth of a crystal without the problem of thickness and stress thereof, thereby avoiding unnecessary stress and further improving the performance of the device formed in the first substrate.

主权项

1. A method for manufacturing a semiconductor substrate structure, comprising:
preparing a first substrate; forming at least one conductive layer and a bonding layer on a first surface of the first substrate in sequence; etching the bonding layer and the at least one conductive layer, so as to form a second opening to expose the first surface; preparing a second substrate; forming a first opening in a second substrate from a second surface of the second substrate; oppositely arrange the first substrate and the second substrate, wherein the first surface of the first substrate faces toward a second surface of the second substrate; and coupling the first substrate and the at least one conductive layer to the second surface of the second substrate via the bonding layer, so as to fixedly coupled the first substrate and the at least one conductive layer to the second substrate, wherein a first cavity is formed by the first opening and a second cavity is formed by the second opening.