METHOD FOR MAKING III-V NANOWIRE QUANTUM WELL TRANSISTOR

摘要

The present invention provides a filed effect transistor and the method for preparing such a filed effect transistor. The filed effect transistor comprises a semiconductor, germanium nanowires, a first III-V compound layer surrounding the germanium nanowires, a semiconductor barrier layer, a gate dielectric layer and a gate electrode sequentially formed surrounding the first III-V compound layer, and source/drain electrodes are respectively located at each side of the gate electrode and on the first III-V compound layer. According to the present invention, the band width of the barrier layer is greater than that of the first III-V compound layer, and the band curvatures of the barrier layer and the first III-V compound layer are different, therefore, a two dimensional electron gas (2DEG) is formed in the first III-V compound layer near the barrier layer boundary. Since the 2DEG has higher mobility, the performance of the filed effect transistor improved. Besides, the performance of the filed effect transistor also improved due to the structure is a gate-all-around structure.

主权项

1. A field-effect transistor, comprising:
a semiconductor substrate; a germanium nanowire; a first III-V compound layer surrounding around said germanium nanowire; a barrier layer, a gate dielectric layer, and a gate electrode sequentially on said first III-V compound layer; and a source region and a drain region on said first III-V compound layer and at one side of said gate electrode respectively.