DUAL-GATE CHEMICAL FIELD EFFECT TRANSISTOR SENSOR

摘要

A chemical sensing field effect transistor device is disclosed. The device can include a control gate structure interfacing a control side of a semiconductor channel region, a source region, and a drain region. The control gate structure can comprise a control gate dielectric and a control gate electrode. The device can include a sensing gate structure interfacing the semiconductor channel region, the source region, and the drain region at a sensing side of the semiconductor channel region opposite the control gate structure. The sensing gate structure can comprise a sensing gate dielectric, and a sensing gate electrode. The device can include a functional layer interfacing the sensing gate electrode opposite the sensing gate dielectric. The functional layer can have an exposed interface surface. The functional layer can be capable of binding with a target analyte material sufficient to create a measurable change in conductivity across the semiconductor channel region.

主权项

1. A chemical sensing field effect transistor device comprising:
a semiconductor channel region interfacing a drain region and a source region; a control gate structure interfacing a control side of the semiconductor channel region, the source region, and the drain region, the control gate structure comprising a control gate dielectric and a control gate electrode; a sensing gate structure interfacing the semiconductor channel region, the source region, and the drain region at a sensing side of the semiconductor channel region opposite the control gate structure, the sensing gate structure comprising a sensing gate dielectric, and a sensing gate electrode; and a functional layer interfacing the sensing gate electrode opposite the sensing gate dielectric, the functional layer having an exposed interface surface, the functional layer capable of binding with a target analyte material sufficient to create a measurable change in conductivity across the semiconductor channel region.