Semiconductor Structure with Stress-Reducing Buffer Structure

摘要

A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.

主权项

1. A semiconductor structure comprising:
a buffer structure including:
a buffer layer, wherein the buffer layer has a first side formed of a first nitride-based material including a plurality of islands and a second side opposite the first side at which the islands are coalesced into a single layer of the first nitride-based material, wherein the coalesced portion of the buffer layer has a thickness in a range of approximately 100 Angstroms to approximately 100 microns; andan intermediate layer located immediately adjacent to the second side of the buffer layer, wherein the intermediate layer is configured to provide stress relief in the semiconductor structure; and a set of semiconductor layers formed adjacent to the intermediate layer, wherein the buffer structure is configured such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa.