| 发明名称 |
Method of Manufacturing a Semiconductor Device with Trench Gate by Using a Screen Oxide Layer |
| 摘要 |
A screen oxide layer is formed on a main surface of a semiconductor layer and a passivation layer is formed on the screen oxide layer. A gate trench is formed in a portion of the semiconductor layer exposed by a mask opening in a trench mask that comprises the passivation layer. A gate dielectric is formed at least along sidewalls of the gate trench. After removing the passivation layer, dopants are implanted through the screen oxide layer to form at least one of a source zone and a body zone in the semiconductor layer. |
| 申请公布号 |
US2017110573(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615292758 |
申请日期 |
2016.10.13 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Laforet David;Ouvrard Cedric |
| 分类号 |
H01L29/78;H01L21/265;H01L29/08;H01L29/66;H01L29/739;H01L21/28;H01L29/40;H01L29/10;H01L29/06;H01L29/423;H01L21/02 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a screen oxide layer on a main surface of a semiconductor layer and a passivation layer on the screen oxide layer; forming a gate trench in a portion of the semiconductor layer exposed by a mask opening in a trench mask comprising the passivation layer; forming a gate dielectric at least along sidewalls of the gate trench; and implanting, after removing the passivation layer, dopants through the screen oxide layer to form at least one of a source zone and a body zone in the semiconductor layer. |
| 地址 |
Villach AT |
