| 发明名称 |
Magnetic Tunnel Junction With Reduced Damage |
| 摘要 |
A method includes patterning a metal layer to form a plurality of bottom electrode features, forming a Magnetic Tunnel Junction (MTJ) stack by a line-of-sight deposition process such that a first portion of the MTJ stack is formed on the bottom electrode features, and a second portion of the MTJ stack is formed on a level that is different than a top surface of the bottom electrode features, and performing a removal process to remove the second portion of the MTJ stack while leaving the first portion of the MTJ stack substantially intact. |
| 申请公布号 |
US2017110649(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201514757582 |
申请日期 |
2015.12.24 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Diaz Carlos H.;Chuang Harry-Hak-Lay |
| 分类号 |
H01L43/02;H01L43/12;H01L27/22;H01L43/08 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
patterning a metal layer to form a plurality of bottom electrode features; forming a Magnetic Tunnel Junction (MTJ) stack by a line-of-sight deposition process such that a first portion of the MTJ stack is formed on the bottom electrode features, and a second portion of the MTJ stack is formed on a level that is different than a top surface of the bottom electrode features; and performing a removal process to remove the second portion of the MTJ stack while leaving the first portion of the MTJ stack substantially intact. |
| 地址 |
Hsin-Chu TW |
