Semiconductor device and a method of making a semiconductor device

摘要

An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

主权项

1. An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device comprising:
a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others; a sloped mesa region; an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction, the light emitting spatial region configured with the sloped mesa region such that a ratio of the sloped mesa region to the light emitting spatial region ranges from 1 to 4, the light emitting spatial region characterized by a concentrated current region; an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.