Method of patterning features of a semiconductor device

摘要

A method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.

主权项

1. A method, comprising:
forming a plurality of mandrel structures on a substrate, wherein the plurality of mandrel structures have a substantially equal pitch; oxidizing each of the plurality of the mandrel structures to form an oxidized region on each mandrel of the plurality of mandrels wherein the oxidized region is disposed on each of two opposing sidewalls, a top surface, and opposing end cap surfaces of each residual mandrel structure of the plurality of mandrels, the residual mandrel structure remaining after the oxidizing process; etching the oxidized regions to form a plurality of oxide spacers disposed at a substantially equal pitch, wherein the plurality of oxide spacers are formed on each of the two opposing sidewall surfaces of each residual mandrel structure, and wherein the etching removes the oxidized region from the top surface of each of the residual mandrel structures and removes the oxidized region from the end caps of each of the residual mandrel structures; and using the plurality of oxide spacers to pattern an underlying layer.