Semiconductor device

摘要

In an active region, p+ regions are selectively disposed in a surface layer of an n− drift layer on an n+ semiconductor substrate. A p-base layer is disposed on surfaces of the n− drift layer and the P+ regions, and an MOS structure is disposed on the p-base layer. In another portion of the active region, a p+ region is disposed to be in contact with the source electrode on the p+ regions. In a breakdown voltage structure region (100), a JTE structure having at least a P− region is disposed separately from the P+ regions and the p-base layer, to surround the active region. The P− region is electrically in contact with the P+ region in a portion in which the MOS structure is not formed, in the vicinity of the boundary between the active region and the breakdown voltage structure region.

主权项

1. A semiconductor device comprising:
an active region disposed on a semiconductor substrate; and an edge termination structure region disposed on the semiconductor substrate to surround the active region, wherein the active region includes
a first-conductivity-type semiconductor layer disposed on the semiconductor substrate and having an impurity concentration lower than the semiconductor substrate,a first second-conductivity-type semiconductor region selectively disposed in a surface layer of the first-conductivity-type semiconductor layer, to reach a boundary between the active region and the edge termination structure region, the surface layer of the first-conductivity-type semiconductor layer being on a side opposite to the semiconductor substrate,a first electrode electrically connected to the first second-conductivity-type semiconductor region,a front surface device structure made up of at least the first second-conductivity-type semiconductor region and the first electrode,a second electrode disposed on a back surface of the semiconductor substrate, anda second second-conductivity-type semiconductor region disposed in a region excluding a region in which the front surface device structure is disposed, and formed to be in contact with the first second-conductivity-type semiconductor region and up to a boundary position between the active region and the edge termination structure region, the edge termination structure region includes
a plurality of third second-conductivity-type semiconductor regions disposed in the surface layer of the first-conductivity-type semiconductor layer, separately from the boundary between the active region and the edge termination structure region completely and having an impurity concentration lower than the first second-conductivity-type semiconductor region, a surface layer of the plurality of third second-conductivity-type semiconductor regions being on the side opposite to the semiconductor substrate, the second second-conductivity-type semiconductor region is in contact with the first electrode, among the plurality of the third second-conductivity-type semiconductor regions, at least the third second-conductivity-type semiconductor region closest to the active region is electrically connected to the second second-conductivity-type semiconductor region under a gate runner disposed above the semiconductor substrate in the vicinity of the boundary between the active region and the edge termination structure region, and the second second-conductivity-type semiconductor region is formed directly on the first second-conductivity-type semiconductor region in a depth direction and on the side opposite to a side of the first-conductivity-type semiconductor layer.