发明名称 |
Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory |
摘要 |
A method of reading a memory cell of a magneto-resistive random access memory device, wherein the memory cell has a ferromagnetic free layer having a first magnetization orientation and a ferromagnetic reference layer, includes applying a first read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a first voltage generated by the memory cell in response to the first read current, generating a magnetic field adjacent to the memory cell, the magnetic field having a second magnetization orientation that is not parallel to the first magnetization orientation, while the magnetic field is being generated, applying a second read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a second voltage generated by the memory cell in response to the second read current, and determining a state of the memory cell based on the first voltage and the second voltage. |
申请公布号 |
US9627024(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201414917410 |
申请日期 |
2014.09.16 |
申请人 |
University of Pittsburgh—Of the Commonwealth System of Higher Education |
发明人 |
Chen Yiran;Eken Enes;Li Hai;Wen Wujie;Bi Xiuyuan |
分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
代理机构 |
Eckert Seamans Cherin & Mellott, LLC |
代理人 |
Eckert Seamans Cherin & Mellott, LLC ;Levy Philip E. |
主权项 |
1. A method of reading a memory cell of a magneto-resistive random access memory device, the memory cell having a ferromagnetic free layer having a first magnetization orientation and a ferromagnetic reference layer, comprising:
applying a first read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a first voltage generated by the memory cell in response to the first read current; generating a magnetic field adjacent to the memory cell, the magnetic field having a second magnetization orientation that is not parallel to the first magnetization orientation; while the magnetic field is being generated, applying a second read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a second voltage generated by the memory cell in response to the second read current; terminating the magnetic field after the second voltage is stored; and determining a state of the memory cell based on the first voltage and the second voltage. |
地址 |
Pittsburgh PA US |