| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure, in which the fin-shaped structure has a top portion and a bottom portion; forming a first doped layer on the STI and the top portion; and performing a first anneal process. |
| 申请公布号 |
US9627268(B2) |
申请公布日期 |
2017.04.18 |
| 申请号 |
US201514884746 |
申请日期 |
2015.10.15 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chang Ching-Yu;Feng Li-Wei;Tsai Shih-Hung;Fu Ssu-I;Jenq Jyh-Shyang;Lin Chien-Ting;Chen Yi-Ren;Hsieh Shou-Wei;Chen Hsin-Yu;Lin Chun-Hao |
| 分类号 |
H01L21/8238;H01L21/324 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure so that each of the first fin-shaped structure and the second fin-shaped structure is divided into a top portion and a bottom portion; forming a first doped layer on the STI and on the top portion of the second fin-shaped structure; forming a second doped layer on the STI and the top portion of the first fin-shaped structure, wherein the first doped layer and the second doped layer comprise dopants of same type; and performing an anneal process. |
| 地址 |
Hsin-Chu TW |
