Semiconductor device allowing metal layer routing formed directly under metal pad

摘要

The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing and a second specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing and the second specific metal layer routing are formed in a second metal layer of the semiconductor device, wherein the first specific metal layer routing is directly under the metal pad and the second specific metal layer routing is not directly positioned under the metal pad.

主权项

1. A semiconductor device, comprising:
a metal pad, positioned in a first metal layer of the semiconductor device; and a first specific metal layer routing and a second specific metal layer routing, formed in a
second metal layer of the semiconductor device, wherein the first specific metal layerrouting is directly under the metal pad and the second specific metal layer routing is not directly positioned under the metal pad.